Dinusha and Dawei’s conference abstracts were accepted to 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022). Congratulations!
03/2022
Two papers were accepted to 2022 MRS Spring Meeting! Congratulations!
03/2022
Dinusha’s paper on Ga2O3/GaN heterojunction p-n diodes was accepted to IEEE Journal of the Electron Devices Society. Congratulations!
01/2022
Dawei’s paper on designing delta-doped AlGaO/GaO HEMTs was accepted to IEEE Transactions on Electron Devices. Congratulations!
11/2021
Dr. Fu was awarded the ISU Regents Innovation Fund Award.
09/2021
Our comprehensive review papers (Part I and Part II) on vertical GaN power devices are published in Transactions on Electron Devices!
07/2021
Our review paper on selective area doping and regrowth for vertical GaN power devices is accepted to Materials Today (Impact Factor: 26.416), which is one of the most highly respected sources of news and reviews in materials science. Congratulations!
04/2021
Dinusha and Dawei’s conference abstracts were accepted to 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021). Congratulations!
04/2021
Two papers were accepted to 63rd Electronic Materials Conference (63rd EMC)! Congratulations!
03/2021
Dinusha’s conference abstract was accepted as the Late News to the 2021 MRS Spring Meeting for presentation! Congratulations!
02/2021
Dawei’s conference abstract was accepted to the 2021 MRS Spring Meeting for presentation! Congratulations!
01/2021
Dinusha joined our group as a PhD student in the ECpE department. Welcome!
01/2021
Dawei joined our group as a PhD student in the ECpE department. Welcome!
01/2021
New paper on Ga2O3 film with record-high mobility using TMGa MOCVD growth was accepted to Applied Physics Letters in the Ultrawide Bandgap Semiconductor special issue. Congratulations!
12/2020
New paper on (001) and (-201) Ga2O3 DLTS measurements was published in Journal of Applied Physics. Congratulations!
12/2020
“Better etching enhances selective area doping for vertical GaN power devices,” Compound Semiconductor.
12/2019
“First steps to high temperature GaN memory?” Compound Semiconductor.
04/2019
“New memory device can take the heat,” IEEE Spectrum.
03/2019
“Vertical gallium nitride Schottky diodes with single and double drift layers,” Semiconductor Today, Silicon Valley Microelectronics, etc.
10/2017
“Aluminium nitride Schottky barrier diodes with breakdown more than 1 kV,” Semiconductor Today, Silicon Valley Microelectronics, Semiconductor Society (India), University of Strathclyde, China Wechat Platform, etc.
08/2017
“Indium gallium nitride solar cells on non-polar and semi-polar substrates,” Semiconductor Today.
05/2017
“Buffer and drift layer effects on vertical gallium nitride diodes,”
Semiconductor Today, Silicon Valley Microelectronics.
04/2017